Nambari ya Bidhaa ya Mtengenezaji:
IPF13N03LA G
Product Overview
Mtengenezaji:
Infineon Technologies
Nambari ya Kipande:
IPF13N03LA G-DG
Maelezo:
MOSFET N-CH 25V 30A TO252-3
Maelezo ya Kina:
N-Channel 25 V 30A (Tc) 46W (Tc) Surface Mount PG-TO252-3-23
Hesabu:
468 Pcs Mpya Halisi Katika Hifadhi
12801257
Omba Nukuu
Kiasi
Kiasi cha chini 1
Kiasi cha chini 1
Plcu
(*) ni lazima
Tutakurudishia jibu ndani ya masaa 24
Tutakurudishia jibu ndani ya masaa 24
TUMA
IPF13N03LA G Maalum ya Kiufundi
Kikundi
FETs, MOSFETs, FET moja, MOSFETs
Mtengenezaji
Infineon Technologies
Ufungashaji
Cut Tape (CT)
Mfululizo
OptiMOS™
Hali ya Bidhaa
Obsolete
Aina ya FET
N-Channel
Teknolojia
MOSFET (Metal Oxide)
Drain kwa Voltage ya Chanzo (Vdss)
25 V
Sasa - Drain inayoendelea (id) @ 25 ° C
30A (Tc)
Voltage ya Hifadhi (Max Rds On, Min Rds On)
4.5V, 10V
Rds Kwenye (Max) @ Id, Vgs
12.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2V @ 20µA
Malipo ya lango (Qg) (Max) @ Vgs
8.3 nC @ 5 V
Vgs (Max)
±20V
Uwezo wa kuingiza (Ciss) (Max) @ Vds
1043 pF @ 15 V
Kipengele cha FET
-
Usambazaji wa Nguvu (Max)
46W (Tc)
Joto la Uendeshaji
-55°C ~ 175°C (TJ)
Aina ya Kuweka
Surface Mount
Kifurushi cha Kifaa cha Muuzaji
PG-TO252-3-23
Kifurushi / Kesi
TO-252-3, DPAK (2 Leads + Tab), SC-63
Nambari ya Bidhaa ya Msingi
IPF13N
Karatasi za Takwimu na Nyaraka
Mchoro wa HTML
Jarida la Takwimu
Taarifa za Ziada
Kifurushi cha Kawaida
2,500
Majina mengine
IPF13N03LAGINTR
IPF13N03LAINTR-DG
IPF13N03LAGXTINTR-DG
IPF13N03LAINCT-DG
IPF13N03LA
IPF13N03LAINTR
IPF13N03LAGXT
IPF13N03LAG
IPF13N03LAGINTR-NDR
IPF13N03LAGINCT-NDR
SP000017610
IPF13N03LAINCT
IPF13N03LAGXTINTR
IPF13N03LAGINCT
Uainishaji wa Mazingira na Usafirishaji
Kiwango cha Usikivu wa Moisture (MSL)
1 (Unlimited)
Hali ya REACH
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Digi Cheti
Bidhaa Zinazohusiana
IPD135N03LGXT
MOSFET N-CH 30V 30A TO252-3
IPC100N04S51R7ATMA1
MOSFET N-CH 40V 100A 8TDSON-34
IPL65R420E6AUMA1
MOSFET N-CH 650V 10.1A THIN-PAK
